650 V, 10 A low VF power Schottky silicon carbide diode
Features
• No or negligible reverse recovery
• Switching behavior independent of temperature
• Dedicated to PFC applications
• High forward surge capability
• Operating Tj from -40 °C to 175 °C
• D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.
• ECOPACK2 compliant component
Applications
• DC/DC converter
• High frequency inverter
• Snubber
• Boost PFC function
Description
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.
